Produktübersicht
- Artikelnummer
- MMTDT-25-20-L-12.00-D-TUS
- Hersteller
- Samtec
- Produktkategorie
- Rechteckige Kabelkonfektionen
- Beschreibung
- Rectangular Cable Assemblies .100 Mini Mate Double Row Discrete Wire Teflon Cable Assembly, Terminal
Dokumente & Medien
- Datenblätter
- MMTDT-25-20-L-12.00-D-TUS
Produkteigenschaften
- Connector End A :
- Plug
- Connector End A Pin Count :
- 50 Position
- Product :
- Discrete Wire Cable Assemblies
- Type :
- Cable Assembly
- Voltage Rating :
- 600 V
Beschreibung
Rectangular Cable Assemblies .100 Mini Mate Double Row Discrete Wire Teflon Cable Assembly, Terminal
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
RN2106MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723) |
RN1401,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-346) |
RN1410,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-346) |
RN1409,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-346) |
RN1103MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-723) |
RN1105MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=2.2kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723) |
RN2415,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-346) |
RN1402,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346) |
RN2967(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz |
RN2103MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-723) |
RN1404,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) |
RN2971(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz |
RN2408,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-346) |
RN1406,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) |
RN1412,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=22kO, VCEO=50V, IC=0.1A (SOT-346) |