Produktübersicht

Artikelnummer
MEE1S0309DC
Hersteller
Murata Power Solutions
Produktkategorie
Isolierte DC/DC-Wandler
Beschreibung
Isolated DC/DC Converters SUGGESTED ALTERNATE 580-NKE0309DC

Dokumente & Medien

Datenblätter
MEE1S0309DC

Produkteigenschaften

Height :
6.9 mm
Input Voltage, Max :
3.63 V
Input Voltage, Min :
2.97 V
Input Voltage, Nominal :
3.3 V
Isolation Voltage :
1 kV
Length :
11.6 mm
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Number of Outputs :
1 Output
Output Current-Channel 1 :
111 mA
Output Power :
1 W
Output Voltage-Channel 1 :
9 V
Package / Case :
DIP-8
Product :
Isolated
Series :
MEE1
Width :
9.9 mm

Beschreibung

Isolated DC/DC Converters SUGGESTED ALTERNATE 580-NKE0309DC

Preis & Beschaffung

Zugehöriges Produkt

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Das könnte Sie auch interessieren

Teil Hersteller Lager Beschreibung
GS8342D19BGD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 2M x 18 36M
GS8342DT11BD-500I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342Q37BD-333I GSI Technology 3,000 SRAM 1.8 or 1.5V 1M x 36 36M
GS8342TT11BD-500I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342T19BGD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 2M x 18 36M
GS8342DT06BGD-500I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 8 36M
GS8342T37BGD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 1M x 36 36M
GS8342TT07BGD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 8 36M
GS8342DT10BGD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342TT07BD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 8 36M
GS8342DT19BD-400I GSI Technology 3,000 SRAM 1.8 or 1.5V 2M x 18 36M
GS8342QT10BD-333I GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342Q19BGD-333I GSI Technology 3,000 SRAM 1.8 or 1.5V 2M x 18 36M
71V416L15YGI Renesas / IDT 3,000 SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
GS8320Z36AGT-333 GSI Technology 3,000 SRAM 2.5 or 3.3V 1M x 36 36M