Produktübersicht
- Artikelnummer
- 416F27133CDR
- Hersteller
- CTS Electronic Components
- Produktkategorie
- Kristalle
- Beschreibung
- Crystals 27.12MHz 18pF 30ppm -20C +70C
Dokumente & Medien
- Datenblätter
- 416F27133CDR
Produkteigenschaften
- ESR :
- 200 Ohms
- Frequency :
- 27.12 MHz
- Frequency Stability :
- 30 PPM
- Length :
- 1.6 mm
- Load Capacitance :
- 18 pF
- Maximum Operating Temperature :
- + 70 C
- Minimum Operating Temperature :
- - 20 C
- Package / Case :
- 1.6 mm x 1.2 mm
- Packaging :
- Reel
- Series :
- 416
- Termination Style :
- SMD/SMT
- Tolerance :
- 30 PPM
- Width :
- 1.2 mm
Beschreibung
Crystals 27.12MHz 18pF 30ppm -20C +70C
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
NTP165N65S3H | onsemi | 790 | MOSFET SUPERFET3 FAST 165MOHM TO-220 |
SIHG24N80AE-GE3 | Vishay / Siliconix | 550 | MOSFET N-CHANNEL 800V E Series Pwr MOSFET |
TK110A65Z,S4X | Toshiba | 197 | MOSFET MOSFET 650V 110mOhms DTMOS-VI |
SIHG080N60E-GE3 | Vishay / Siliconix | 550 | MOSFET N-CHANNEL 600V |
IPW65R155CFD7XKSA1 | Infineon Technologies | 240 | MOSFET HIGH POWER_NEW |
IPB65R110CFD7ATMA1 | Infineon Technologies | 474 | MOSFET HIGH POWER_NEW |
IPW65R125CFD7XKSA1 | Infineon Technologies | 158 | MOSFET HIGH POWER_NEW |
STW68N65DM6-4AG | STMicroelectronics | 107 | MOSFET Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET |
IXTP94N20X4 | IXYS | 36 | MOSFET MSFT 94A 200V X4 |
TJ200F04M3L,LXHQ | Toshiba | 15,760 | MOSFET 375W 1MHz Automotive; AEC-Q101 |
SCTH100N65G2-7AG | STMicroelectronics | 1,060 | MOSFET PTD NEW MAT & PWR SOLUTION |
NTBG020N090SC1 | onsemi | 921 | MOSFET SIC MOS 20MOHM 900V |
NTHL020N090SC1 | onsemi | 709 | MOSFET 20MOHM 900V |
SSM6N951L,EFF | Toshiba | 9,859 | MOSFET MOSFET |
IPN70R360P7SAUMA1 | Infineon Technologies | 4,993 | MOSFET |