Dokumente & Medien
- Datenblätter
- ECS-120.003-18-1
Produkteigenschaften
- Diameter :
- -
- Drive Level :
- 1 mW
- ESR :
- 25 Ohms
- Frequency :
- 12.000393 MHz
- Frequency Stability :
- 50 PPM
- Height :
- 13.46 mm
- Length :
- 11.35 mm
- Load Capacitance :
- 18 pF
- Maximum Operating Temperature :
- + 70 C
- Minimum Operating Temperature :
- - 10 C
- Package / Case :
- HC-49
- Series :
- HC49U
- Termination Style :
- Radial
- Tolerance :
- 30 PPM
- Width :
- 4.35 mm
Beschreibung
Crystals CRYSTAL 12.000393 MH
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
RGTVX2TS65DGC11 | ROHM Semiconductor | 450 | IGBT Transistors FIELD STOP TRENCH IGBT |
AIKB50N65DH5ATMA1 | Infineon Technologies | 1,000 | IGBT Transistors DISCRETE SWITCHES |
RGS30TSX2DHRC11 | ROHM Semiconductor | 450 | IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Built-In FRD, Automotive Field Stop Trench IGBT |
RGSX5TS65HRC11 | ROHM Semiconductor | 450 | IGBT Transistors FIELD STOP TRENCH IGBT |
RGSX5TS65EGC11 | ROHM Semiconductor | 450 | IGBT Transistors FIELD STOP TRENCH IGBT |
RGSX5TS65DHRC11 | ROHM Semiconductor | 450 | IGBT Transistors FIELD STOP TRENCH IGBT |
RGSX5TS65EHRC11 | ROHM Semiconductor | 450 | IGBT Transistors FIELD STOP TRENCH IGBT |
IKQ40N120CT2XKSA1 | Infineon Technologies | 420 | IGBT Transistors IGBT PRODUCTS |
IXYH16N170C | IXYS | 240 | IGBT Transistors IGBT XPT-HI VOLTAGE |
AFGY120T65SPD | onsemi | 440 | IGBT Transistors FS3 IGBT 650V/120A AND AUTO STEALTH DIODE |
IXXH50N60B3D1 | IXYS | 300 | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT |
IXGA20N250HV | IXYS | 50 | IGBT Transistors IGBT NPT-VERY HIVOLT |
MMIX4B20N300 | IXYS | 20 | IGBT Transistors IGBT SMPD PKG-BIMOSFET |
LGD18N45TH | Littelfuse | 2,500 | IGBT Transistors DPAK, IGBT3 |
STGD6M65DF2 | STMicroelectronics | 2,500 | IGBT Transistors PTD IGBT & IPM |