Datenblätter

S6010VS3TP

Breakover Current IBO Max :

100 A

Gate Trigger Current - Igt :

500 uA

Gate Trigger Voltage - Vgt :

800 mV

Holding Current Ih Max :

8 mA

Maximum Gate Peak Inverse Voltage :

6 V

Maximum Operating Temperature :

+ 110 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

Through Hole

Off-State Leakage Current @ VDRM IDRM :

5 uA

On-State RMS Current - It RMS :

10 A

Package / Case :

TO-251

Packaging :

Tube

Rated Repetitive Off-State Voltage VDRM :

600 V

Series :

Sxx10xSx

Vf - Forward Voltage :

1.6 V