rfq@cintymcu.com
产品概览
文档与媒体
- 数据列表
- SIHB22N60AEL-GE3
产品详情
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 21 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Pd - Power Dissipation :
- 208 W
- Qg - Gate Charge :
- 41 nC
- Rds On - Drain-Source Resistance :
- 180 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
产品描述
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
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