数据列表

SCTW90N65G2V

Channel Mode :

Enhancement

Id - Continuous Drain Current :

90 A

Maximum Operating Temperature :

+ 200 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

HiP-247-3

Packaging :

Tube

Pd - Power Dissipation :

390 W

Qg - Gate Charge :

157 nC

Rds On - Drain-Source Resistance :

25 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

650 V

Vgs - Gate-Source Voltage :

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage :

1.9 V