产品概览

产品型号
TK39J60W5,S1VQ
制造商
Toshiba
产品类别
MOSFET
产品描述
MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC

文档与媒体

数据列表
TK39J60W5,S1VQ

产品详情

Channel Mode :
Enhancement
Id - Continuous Drain Current :
38.8 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-3PN-3
Packaging :
Tube
Pd - Power Dissipation :
270 W
Qg - Gate Charge :
110 nC
Rds On - Drain-Source Resistance :
55 mOhms
Technology :
SI
Tradename :
DTMOSIV
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
3.7 V

产品描述

MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC

采购与价格

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