rfq@cintymcu.com
产品概览
文档与媒体
- 数据列表
- C3M0120065K
产品详情
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 22 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 98 W
- Qg - Gate Charge :
- 28 nC
- Rds On - Drain-Source Resistance :
- 120 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 4 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.6 V
产品描述
MOSFET Gen 3 650V 120 mO SiC MOSFET
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