产品概览

产品型号
SCT3030ALGC11
制造商
ROHM Semiconductor
产品类别
MOSFET
产品描述
MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS

文档与媒体

数据列表
SCT3030ALGC11

产品详情

Channel Mode :
Enhancement
Id - Continuous Drain Current :
70 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
262 W
Qg - Gate Charge :
104 nC
Rds On - Drain-Source Resistance :
30 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage :
2.7 V

产品描述

MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS

采购与价格

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