产品概览
文档与媒体
- 数据列表
- FP25R12W2T4_B11
产品详情
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.25 V
- Continuous Collector Current at 25 C :
- 39 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Packaging :
- Tray
- Pd - Power Dissipation :
- 175 W
- Product :
- IGBT Silicon Modules
产品描述
IGBT Modules IGBT 1200V 25A
采购与价格
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