产品概览

产品型号
CRMA1206AF6M00DKEF
制造商
Vishay
产品类别
厚膜电阻器 - SMD
产品描述
Thick Film Resistors - SMD 0.30W 6Mohm .5% AEC-Q200

文档与媒体

数据列表
CRMA1206AF6M00DKEF

产品详情

Application :
Automotive Grade
Case Code - in :
1206
Case Code - mm :
3216
Features :
Wrap-Around Termination
Maximum Operating Temperature :
+ 155 C
Minimum Operating Temperature :
- 55 C
Packaging :
Cut Tape, MouseReel, Reel
Power Rating :
300 mW
Resistance :
6 mOhms
Series :
CRMA
Temperature Coefficient :
100 PPM / C
Tolerance :
0.5 %
Voltage Rating :
1 kV

产品描述

Thick Film Resistors - SMD 0.30W 6Mohm .5% AEC-Q200

采购与价格

推荐产品

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

您可能在找

型号 品牌 库存 描述
GS832132AGD-333 GSI Technology 3,000 SRAM 2.5 or 3.3V 1M x 32 32M
70V3569S4BFG Renesas / IDT 3,000 SRAM 16K X 36 SYNCH DPRAM
71256L25YG Renesas / IDT 3,000 SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM
GS816236DGB-200E GSI Technology 3,000 SRAM 2.5 or 3.3V 512K x 36 18M
71V256SA12YGI Renesas / IDT 3,000 SRAM 32Kx8 ASYNCHRONOUS 3.3V STATIC RAM
GS8320E32AGT-250V GSI Technology 3,000 SRAM 1.8/2.5V 1M x 32 32M
GS8320E36AGT-250V GSI Technology 3,000 SRAM 1.8/2.5V 1M x 36 36M
GS8320E18AGT-250V GSI Technology 3,000 SRAM 1.8/2.5V 2M x 18 36M
GS832036AGT-250V GSI Technology 3,000 SRAM 1.8/2.5V 1M x 36 36M
GS832032AGT-250V GSI Technology 3,000 SRAM 1.8/2.5V 1M x 32 32M
GS832018AGT-250V GSI Technology 3,000 SRAM 1.8/2.5V 2M x 18 36M
GS8662S18BGD-300 GSI Technology 3,000 SRAM 1.8 or 1.5V 4M x 18 72M
GS8662S08BGD-300 GSI Technology 3,000 SRAM 1.8 or 1.5V 8M x 8 64M
GS8662S09BGD-300 GSI Technology 3,000 SRAM 1.8 or 1.5V 8M x 9 72M
GS8662S08BGD-250 GSI Technology 3,000 SRAM 1.8 or 1.5V 8M x 8 64M