产品概览
文档与媒体
- 数据列表
- 3-1879676-9
产品详情
- Diameter :
- 2.5 mm
- Length :
- 7.2 mm
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Power Rating :
- 250 mW (1/4 W)
- Resistance :
- 332 kOhms
- Temperature Coefficient :
- 25 PPM / C
- Termination Style :
- Axial
- Tolerance :
- 0.1 %
- Voltage Rating :
- 350 V
产品描述
Metal Film Resistors - Through Hole H8 332K 0.1% 25PPM
采购与价格
推荐产品
您可能在找
型号 | 品牌 | 库存 | 描述 |
---|---|---|---|
VP0808L-G P005 | Microchip Technology | 3,000 | MOSFET N-CH Enhancmnt Mode MOSFET |
PJQ4442P-AU_R2_000A1 | PANJIT | 3,000 | MOSFET /4442/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-40FQMN//PJ/DFN33338L-AS34/PJQ4442P-ASM7/DFN33338L-AS01 |
NVHL110N65S3HF | onsemi | 3,000 | MOSFET SUPERFER3 FRFET AUTOMOTIVE 110MOHM TO-247-3 |
PJQ5428_R2_00001 | PANJIT | 3,000 | MOSFET PJ/Q5428/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-30FKMN//PJ/DFN50608L-AS38/PJQ5428-ASJ0/DFN50608L-AS01 |
SIHG33N60E-E3 | Vishay / Siliconix | 3,000 | MOSFET 600V Vds 30V Vgs TO-247AC |
RJK1051DPB-00#J5 | Renesas Electronics | 3,000 | MOSFET POWER TRS1 LV-MOS LFPAK MOS TRENCH D12 P |
SI6469DQ-T1-GE3 | Vishay / Siliconix | 3,000 | MOSFET 8.0V 6.0A 1.5W 28mohm @ 4.5V |
SI8902AEDB-T2-E1 | Vishay Semiconductors | 3,000 | MOSFET 24V Vds 12V Vgs MICRO FOOT 2.4 x 1.6 |
PJQ4476AP_R2_00001 | PANJIT | 3,000 | MOSFET /4476/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-100FQMN//PJ/DFN33338L-AS35/PJQ4476AP-ASN4/DFN33338L-AS01 |
RBA250N04AHPF-4UA01#GB0 | Renesas Electronics | 3,000 | MOSFET POWER TRS2 AUTOMOTIVE MOS MP-25LZU |
SIHP22N60AE-GE3 | Vishay Semiconductors | 3,000 | MOSFET 600V Vds 30V Vgs TO-220AB |
NP110N04PUK-E1-AY | Renesas Electronics | 3,000 | MOSFET POWER MOSFET |
RJK03M3DPA-00#J5A | Renesas Electronics | 3,000 | MOSFET BEAM2 Series FET, 30V, WPAK, 2.0mOhm |
NP90N06VLK-E1-AY | Renesas Electronics | 3,000 | MOSFET POWER TRS2 AUTOMOTIVE MOS MP-3ZP ANL2 |
NP90N04VUK-E1-AY | Renesas Electronics | 3,000 | MOSFET POWER DEVICE E AUTOMOTIVE MOS MP-3ZP |