产品概览

产品型号
UPW2W4R7MHD1TO
制造商
Nichicon
产品类别
铝电解电容器 - 径向引线
产品描述
Aluminum Electrolytic Capacitors - Radial Leaded 4.7uF 450 Volts 20% AEC-Q200

文档与媒体

数据列表
UPW2W4R7MHD1TO

产品详情

Capacitance :
4.7 uF
Diameter :
12.5 mm
Lead Spacing :
5 mm
Lead Style :
Straight
Length :
20 mm
Life :
7000 Hour
Maximum Operating Temperature :
+ 105 C
Minimum Operating Temperature :
- 25 C
Packaging :
Ammo Pack
Product :
Low Impedance Electrolytic Capacitors
Qualification :
AEC-Q200
Ripple Current :
49 mA
Series :
UPW
Termination Style :
Radial
Tolerance :
20 %
Voltage Rating DC :
450 VDC

产品描述

Aluminum Electrolytic Capacitors - Radial Leaded 4.7uF 450 Volts 20% AEC-Q200

采购与价格

推荐产品

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

您可能在找

型号 品牌 库存 描述
IS62C51216AL-55TLI-TR ISSI 3,000 SRAM 8Mb, Low Power Async, 512Kx16, 5v,44 Pin TSOP II, RoHS
IS62C10248AL-55TLI-TR ISSI 3,000 SRAM 8Mb, Low Power Async, 1Mbx8 5v,44 Pin TSOP II, RoHS
IS61WV51216EDBLL-8TLI-TR ISSI 3,000 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,8ns,2.4V-3.6V,44 Pin TSOP II, RoHS
IS61WV20488FBLL-8TLI-TR ISSI 3,000 SRAM 16Mb,High-Speed,Async,2Mbx8,8ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS
IS62WV51216HBLL-45B2LI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v~3.6v, 2 CS, 48 Ball mBGA (6x8mm), RoHS
IS66WVE4M16ECLL-70BLI-TR ISSI 3,000 SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V~1.95V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS62WV10248HBLL-45BLI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,1Mb x 8, 45ns, 2.2v~3.6v,48 Ball mBGA (6x8 mm), RoHS
IS62WV51216HBLL-45BLI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v~3.6v,48 Ball mBGA (6x8mm), RoHS
IS62WV10248HBLL-45B2LI-TR ISSI 3,000 SRAM 8Mb, Low Power/Power Saver,Async,1Mb x 8, 45ns, 2.2v~3.6v,2 CS, 48 Ball mBGA (6x8 mm), RoHS
IS61LPD25636A-200TQLI-TR ISSI 3,000 SRAM 8Mb,Pipeline,Sync,256K x 36,200Mhz,3.3v I/O,100 Pin TQFP,3CE, RoHS
IS61LPS25636A-200TQLI-TR ISSI 3,000 SRAM 8Mb,Pipeline,Sync,256K x 36,200Mhz,3.3v I/O,100 Pin TQFP,3CE, RoHS
IS61NLF25636A-7.5TQLI-TR ISSI 3,000 SRAM 8Mb,"No-Wait"/Flow-Through,Sync,256K x 36,7.5ns,3.3v I/O,100 Pin TQFP, RoHS
IS61LF51218A-7.5TQLI-TR ISSI 3,000 SRAM 8Mb,Flow-Through,Sync,512K x 18,7.5ns,3.3v I/O,100 Pin TQFP, 3CE, RoHS
IS62WV25616EALL-55BLI-TR ISSI 3,000 SRAM 4Mb, Low Power/Power Saver,Async,256K x 16, 55ns,1.65~2.2v,mBGA (6x8 mm), RoHS
IS61NLP51218A-200TQLI-TR ISSI 3,000 SRAM 8Mb,"No-Wait"/Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, RoHS