5KP120CAE3/TR13 - Microchip Technology - HKCINTY

5KP120CAE3/TR13

产品概览

产品型号: 5KP120CAE3/TR13

制造商: Microchip Technology

产品类别: ESD 抑制器 / TVS 二极管

产品描述: ESD Suppressors / TVS Diodes TVS

文档与媒体

数据列表: 5KP120CAE3/TR13

产品详情

Breakdown Voltage :: 133 V

Clamping Voltage :: 193 V

Ipp - Peak Pulse Current :: 26.4 A

Maximum Operating Temperature :: + 175 C

Minimum Operating Temperature :: - 55 C

Number of Channels :: 1 Channel

Package / Case :: P600-2

Packaging :: Reel

Polarity :: Bidirectional

Pppm - Peak Pulse Power Dissipation :: 5 kW

Product Type :: TVS Diodes

Termination Style :: Axial

Working Voltage :: 120 V

产品描述

ESD Suppressors / TVS Diodes TVS

采购与价格

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IS61QDB21M36A-250M3L	ISSI	3,000	SRAM 36Mb, QUAD (Burst of 2), Sync SRAM, 1M x 36, 165 Ball FBGA (15x17 mm), RoHS
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IS61DDP2B41M18A-400M3L	ISSI	3,000	SRAM 18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61DDPB21M18A-400M3L	ISSI	3,000	SRAM 18Mb, DDR IIP (Burst of 2) CIO, Sync SRAM, 1M x 18, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61QDP2B21M18A-333M3L	ISSI	3,000	SRAM 18Mb, QUADP (Burst of 2), Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61QDPB21M18A-333M3L	ISSI	3,000	SRAM 18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61QDP2B451236A-400M3L	ISSI	3,000	SRAM 18Mb, QUADP (Burst of 4), Sync SRAM, 512K x 36, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
IS61DDP2B451236A-400M3L	ISSI	3,000	SRAM 18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 512K x 36, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
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