产品概览
- 产品型号
- SPD127R-153M
- 制造商
- API Delevan
- 产品类别
- 固定电感
- 产品描述
- Fixed Inductors 15uH 20% .048ohm Shielded Choke SMT
文档与媒体
- 数据列表
- SPD127R-153M
产品详情
- Core Material :
- Ferrite
- Height :
- 8 mm
- Inductance :
- 15 uH
- Length :
- 12 mm
- Maximum DC Current :
- 4.5 A
- Maximum DC Resistance :
- 48 mOhms
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- PCB Mount
- Packaging :
- Cut Tape, MouseReel, Reel
- Product :
- Power Inductors
- Saturation Current :
- 4.5 A
- Series :
- SPD127/R
- Shielding :
- Shielded
- Termination Style :
- SMD/SMT
- Tolerance :
- 20 %
- Type :
- Choke
- Width :
- 12 mm
产品描述
Fixed Inductors 15uH 20% .048ohm Shielded Choke SMT
采购与价格
推荐产品
您可能在找
型号 | 品牌 | 库存 | 描述 |
---|---|---|---|
SIHP25N60EFL-BE3 | Vishay / Siliconix | 2,000 | MOSFET N-CHANNEL 600V |
TK28V65W,LQ | Toshiba | 5,000 | MOSFET DFN8x8-OS PD=240W 1MHz PWR MOSFET TRNS |
IPB240N04S4R9ATMA1 | Infineon Technologies | 1,000 | MOSFET MOSFET_(20V 40V) |
NVBLS1D7N08H | onsemi | 2,000 | MOSFET T8-80V IN TOLL FOR AUTOMOTIVE |
HUF75345G3 | onsemi / Fairchild | 592 | MOSFET 75a 55V 0.007Ohm NCh UltraFET |
IXTA180N10T-TRL | IXYS | 800 | MOSFET IXTA180N10T TRL |
SIHH080N60E-T1-GE3 | Vishay / Siliconix | 3,050 | MOSFET N-CHANNEL 600V |
R6530KNX3C16 | ROHM Semiconductor | 1,100 | MOSFET 650V MOSFET |
SIHP35N60E-BE3 | Vishay / Siliconix | 2,000 | MOSFET N-CHANNEL 600V |
SIHB28N60EF-GE3 | Vishay / Siliconix | 1,000 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
STO47N60M6 | STMicroelectronics | 1,390 | MOSFET PTD HIGH VOLTAGE |
IPB60R090CFD7ATMA1 | Infineon Technologies | 1,000 | MOSFET HIGH POWER_NEW |
IXFA36N60X3 | IXYS | 450 | MOSFET 600V, 36A current capacity, Ultra junction X3, TO-263 package, MOSFET |
STF46N60M6 | STMicroelectronics | 1,000 | MOSFET PTD HIGH VOLTAGE |
IPP65R090CFD7XKSA1 | Infineon Technologies | 500 | MOSFET HIGH POWER_NEW |