rfq@cintymcu.com
产品概览
文档与媒体
- 数据列表
- 71V65803S133BQG
产品详情
- Access Time :
- 7.5 ns
- Interface Type :
- Parallel
- Maximum Clock Frequency :
- 133 MHz
- Maximum Operating Temperature :
- + 70 C
- Memory Size :
- 9 Mbit
- Minimum Operating Temperature :
- 0 C
- Mounting Style :
- SMD/SMT
- Organization :
- 512 k x 18
- Package / Case :
- CABGA-165
- Packaging :
- Tray
- Supply Current - Max :
- 300 mA
- Supply Voltage - Max :
- 3.465 V
- Supply Voltage - Min :
- 3.135 V
产品描述
SRAM 512Kx18 ZBT SYNC 3.3V PIPELINED SRAM
采购与价格
推荐产品
您可能在找
| 型号 | 品牌 | 库存 | 描述 |
|---|---|---|---|
| IXFQ50N50P3 | IXYS | 3,000 | MOSFET N-Channel: Power MOSFET w/Fast Diode |
| DMT3020LFDFQ-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K |
| DMN3035LWN-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 25V 30V V-DFN3020-8 T&R 10K |
| IXTA48P05T-TRL | IXYS | 3,000 | MOSFET IXTA48P05T TRL |
| DMC2053UVTQ-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 8V 24V TSOT26 T&R 3K |
| NP35N055YUK-E1-AY | Renesas Electronics | 3,000 | MOSFET POWER AUTO MOS 55V, 6.7mohm, HSON |
| DMN4020LFDE-13 | Diodes Incorporated | 3,000 | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF |
| DMP2100UFU-13 | Diodes Incorporated | 3,000 | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W |
| TN0620N3-G-P014 | Microchip Technology | 3,000 | MOSFET N-CH Enhancmnt Mode MOSFET |
| SIHP18N60E-GE3 | Vishay / Siliconix | 3,000 | MOSFET 600V Vds 30V Vgs TO-220AB |
| IRFR420TRRPBF | Vishay / Siliconix | 3,000 | MOSFET N-Chan 500V 2.4 Amp |
| IRFSL7530PBF | Infineon Technologies | 3,000 | MOSFET 60V Single N-Channel HEXFET Power |
| TK9P65W,RQ | Toshiba | 3,000 | MOSFET Power MOSFET N-Channel |
| DMN61D8LVTQ-13 | Diodes Incorporated | 3,000 | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson |
| NP60N04VLK-E1-AY | Renesas Electronics | 3,000 | MOSFET P-TRS2 AUTOMOTIVE MOS |
