产品概览

产品型号
D89124-0131HK
制造商
3M Connectors
产品类别
集管和线壳
产品描述
Headers & Wire Housings 24P SKT W/O STRN REL W/CNTR BUMP 10U AU

文档与媒体

数据列表
D89124-0131HK

产品详情

Contact Gender :
Socket (Female)
Contact Plating :
Gold
Mating Post Length :
-
Maximum Operating Temperature :
+ 105 C
Minimum Operating Temperature :
- 55 C
Mounting Angle :
Straight
Mounting Style :
Cable Mount / Free Hanging
Number of Positions :
24 Position
Number of Rows :
2 Row
Pitch :
2.54 mm
Product :
Headers
Row Spacing :
2.54 mm
Series :
D89
Termination Post Length :
-
Termination Style :
IDC
Type :
Socket
Wire Gauge :
28 AWG to 26 AWG

产品描述

Headers & Wire Housings 24P SKT W/O STRN REL W/CNTR BUMP 10U AU

采购与价格

推荐产品

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

您可能在找

型号 品牌 库存 描述
RN1103,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-416)
RN2116,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=4.7kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416)
RN2113,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-416)
RN1115,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=2.2kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-416)
RN2104,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=47kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-416)
PDTB143ETR Nexperia 3,000 Bipolar Transistors - Pre-Biased 500 mA, 50 V PNP resistor-equipped
RN2105,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=2.2kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-416)
RN1111,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=10kO, VCEO=50V, IC=0.1A (SOT-416)
RN2115,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416)
RN1107,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-416)
PDTA144TMB,315 Nexperia 3,000 Bipolar Transistors - Pre-Biased PNP Resistor Equipped Transistor
PDTC124EMB,315 Nexperia 3,000 Bipolar Transistors - Pre-Biased NPN Resistor Equipped Transistor
RN1116,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q TR NPN Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-416)
RN1109,LXHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-416)
RN2503(TE85L,F) Toshiba 3,000 Bipolar Transistors - Pre-Biased SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz