产品概览
- 产品型号
- BZW04-26B R0G
- 产品类别
- ESD 抑制器 / TVS 二极管
- 产品描述
- ESD Suppressors / TVS Diodes 400W, 30V, -%, Bidirectional, TVS
文档与媒体
- 数据列表
- BZW04-26B R0G
产品详情
- Breakdown Voltage :
- 28.5 V
- Clamping Voltage :
- 41.5 V
- Ipp - Peak Pulse Current :
- 9.6 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- DO-204AL-2
- Packaging :
- Cut Tape, Reel
- Polarity :
- Bidirectional
- Pppm - Peak Pulse Power Dissipation :
- 400 W
- Product Type :
- TVS Diodes
- Series :
- BZW04
- Termination Style :
- Axial
- Vesd - Voltage ESD Air Gap :
- -
- Vesd - Voltage ESD Contact :
- -
- Working Voltage :
- 25.6 V
产品描述
ESD Suppressors / TVS Diodes 400W, 30V, -%, Bidirectional, TVS
采购与价格
推荐产品
您可能在找
型号 | 品牌 | 库存 | 描述 |
---|---|---|---|
GS864418GE-133V | GSI Technology | 3,000 | SRAM 1.8/2.5V 4M x 18 36M |
GS864236GB-300 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 2M x 36 72M |
GS864218GB-300 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 36M |
GS8642Z18GB-300 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 4M x 18 72M |
GS8642Z36GB-300 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 2M x 36 72M |
GS8662T11BGD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 9 72M |
GS8662TT11BGD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 9 72M |
GS8662T06BGD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 8 64M |
GS8662TT11BD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 9 72M |
GS8662TT06BGD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 8 64M |
GS8662T06BD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 8 64M |
GS8662T11BD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 9 72M |
GS8662TT06BD-500I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 8M x 8 64M |
70V3319S166BCG | Renesas / IDT | 3,000 | SRAM 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
70V659S10BCG | Renesas / IDT | 3,000 | SRAM 128Kx36 STD-PWR 3.3V DUAL-PORT RAM |