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- EB3S-BT06D
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Industrial Relays Intrinsic Barrier
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| 型号 | 品牌 | 库存 | 描述 |
|---|---|---|---|
| CY7C1371KVE33-133AXI | Cypress Semiconductor | 3,000 | SRAM SYNC SRAMS |
| CY7C1440KV33-250BZXI | Cypress Semiconductor | 3,000 | SRAM 36MB SRAM with ECC |
| GS864036GT-250IV | GSI Technology | 3,000 | SRAM 1.8/2.5V 2M x 36 72M |
| IS62WV5128BLL-55T2LI-TR | ISSI | 3,000 | SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v~3.6v,32 Pin TSOP II, RoHS |
| AS6C1616-70BIN | Alliance Memory | 3,000 | SRAM 16M, 3V, 70ns 1024K x 16 Asyn SRAM |
| IS64WV51216EDBLL-10CTLA3 | ISSI | 3,000 | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp |
| 47L16T-I/ST | Microchip Technology | 3,000 | SRAM 16k, 3.0V EERAM IND |
| 70V3319S166PRFG | Renesas / IDT | 3,000 | SRAM 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| IS62C25616EL-45TLI | ISSI | 3,000 | SRAM 4Mb,Low Power,Async,256K x 16,45ns,5v,44 Pin TSOP II, RoHS |
| IS62C5128EL-45QLI | ISSI | 3,000 | SRAM 4Mb,Low Power,Async,512K x 8,45ns,5v,32 Pin SOP (450 mil), RoHS |
| IS64WV6416BLL-15TLA3-TR | ISSI | 3,000 | SRAM 1Mb,High-Speed/Low Power,Async,64K x 16,12ns/3.3v or 15ns/2.5v-3.6v,44 Pin TSOP II, RoHS, Automotive temp |
| 71V416S10PHGI8 | Renesas / IDT | 3,000 | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
| GS8160Z36DGT-250I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 512K x 36 18M |
| 70V9269L12PRFGI | Renesas / IDT | 3,000 | SRAM 16K X 16K |
| GS8640FZ36GT-6.5I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 2M x 36 72M |
